• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    1489738 Hall effect devices INTERNATIONAL BUSINESS MACHINES CORP 26 April 1976 [14 May 1975] 16805/76 Heading H1K A magnetic flux sensor comprises a layer or wafer of semiconductor material having a characteristic resistance #/T of #500 ohms/ square, a source of potential connected to spaced contacts on the layer to provide an electric field between them of #500 volts per cm. and an output contact on the layer between the spaced contacts. Optimum sensitivity is achieved by utilizing a resistance of 5-20,000 ohms/square and a field of 3-30,000 volts/cm., and a high signal/noise ratio by using a rectangular layer with a width of length ratio of between 1 and 3. A preferred structure (Figs. 5A & 5B) comprises a phosphorus-ion-implanted layer 6 at the surface of a weakly P-type silicon substrate, the layer providing a pair of sensors the ends of which are contacted via diffused regions C 1 -C 3 by strip contacts 9, the grounded central one being common to both sensors. An output voltage is derived between output contacts 5 disposed on lateral extensions 14 located midway between contacts C 1 and C 2 and C 3 respectively thus cancelling out the D.C. offset voltages.
    公开号:SU733513A3
    申请号:SU762355262
    申请日:1976-05-11
    公开日:1980-05-05
    发明作者:Уотсон Винал Альберт
    申请人:Интернэйшнл Бизнес Машинз Корпорейшн (Фирма)；
    IPC主号:
    专利说明:

    one
    The invention relates to semiconductor devices and magnetic sensors, in particular to Hall sensors.
    Hall sensors are known that typically generate a reading voltage or a Hall output voltage at best in the order of 10-20 milli: volts per kilogaus. They are a metal-oxide-silicon converter magnetic field of high sensitivity.
    These devices are insensitive.
    A known magnetic flux sensor comprising a layer of a conductive semiconductor material, two contacts a field, an output contact and a voltage source.
    This device has the same disadvantage.
    In order to control the sensitivity in a magnetic flux sensor, having a layer-conducting semiconductor material, two separate field contacts attached to this line, an output contact connected to the layer between two separate contacts, and the voltage source of which is connected to the field contacts, applied voltage to the distance
    2
    between the contacts, the field is at least 500 volts per centimeter and the electrical resistance between, two contactagda fields - at the edge
    b at least 500 ohms, where L is the length and W is the width of the conducting layer between the contacts of the floor.
    Figures 1 and 2 depict two embodiments of the device; fig.Z
    Fig. 0 depicts a variant of connecting a series of sensors that provide balancing of the bias voltage: Figures 4 and 5 show device variants using technologies that create 8 or integrated circuits in a form similar to that shown in Fig. 3; Figure 6 shows in schematic form the operation of the device without the application of a magnetic field; in Figure 7 ® the same with the application of a magnetic field.
    Layer 1 of conductive semiconductor material has contacts 2
     and 3 to apply transverse field voltage. The voltage source is connected, for example, to pin 2, and pin 3 is grounded. Therefore, between contacts 2 and 3 there is an electric field E. E. Layer 1 has a single resistance over the entire length. Therefore, it is easy to determine the electric potential at any node point along it, as. proportional to the source voltage. The output contact 5 is shown located at a certain point between the contacts 2 and 3. It was found that if the conductivity in ohms per unit area of the layer 1 of semiconductor material is kept within certain minimum ranges and if the electric field is kept between contacts 2 and 3 level; the output voltage signal from pin 5 will be one or two orders of magnitude larger than in the known Hall sensors, which means that mobility is achieved: and carriers approaching the levels of volume mobilities of the main semiconductor material. . The main mode of operation of the device: Roycgrg1 is that Lorentz's deviation of the charged carriers leads to the voltage of the Hall, Fig. B shows in schematic form the basic structure of the device in which the voltage source 4 is connected, to the contacts 2 and 3, which are mc on the opposite sides of the layer 1 semiconductor material. The output contact 5 is located between: contacts 2 and 3. The length L of the layer to satellite 5 is measured as the distance X. and the voltage UQ is less; from the contact 5 it is the output voltage that must be controlled by 1 is the value of W, the electric field E exists between contacts 2 and 3; If the resistivity of layer 1 between contact 2 and 3 is uniform, the potential is stressed at any point X along the length L and is propagated to its displacement from the voltage source 4, Density current D of charged carriers in layer 1 is such; the can is shown in FIG. 6. Here vertical dashed lines mark lines of the same potential along layer 1. In this state, no magnetic field is applied to layer 1. No magnetic field B The sensor responds to perpendicularly directed polarity, which is directed inwards or outwards of the plane of FIG. In FIG. 7, essentially in production in FIG. 6, but c. a magnetic field B directed into the plane of the paper, as shown by the intersection of X in part of layer 1 of Fig.6; this field should rotate lines of identical potentials so that their ends are displaced by the value of e from their original vertical position shown in fig.b, This angle of rotation is expressed as Gli, or the angle of rotation of the Hall shown in FIG. From the comparison of Figs 6 and 7 it is obvious that the rotation of li.Uii j.UHoro of the same potential inside layer 1 of semiconductor material is depicted as introduced by the introduction of a magnetic field with a direction perpendicular to the circular surface of the layer. The equation below gives an expression for the voltage Jy between the output contact 5 and the ground, which is shown in Figs 6 and 7., .. -. I. The knowledge (1) is derived from the fundamentals: the position that the resistance is C. 1 uniformly along its length and the voltage IJo at any point is a function of the distance along the length L (part - equation) plus any component of the signal S, which is caused by the rotation of the lines of the same potential, as shown in. 7 (part 5. of the equation). The expression S in equation (1) is a function of the angular rotation of the lines of the same potential shown in FIG. 7, as a result of applying a magnetic field of density B normal relative to the surface of layer 1. The equation given below gives 5 in terms of the angle of rotation 0b 1 W, magnetic flux density 3 and carrier mobility / CJ. Equation (2) with respect to S and substituting this value for SS Equation (1), we get "and" .and, () I.i., 3, Equation (3) is the basic expression for the potential, which: will be measured at contact 5, - located at a distance X from the grounded contact 3 along the sensor 1 oy. It gives this potential as a function of mobility, O carrier, density B of the magnetic flux, form фор) layer J. and voltage U of voltage source 4. Output signal (Jp contains two expressions. The expression ij -4 is voltage DC bias, which can be eliminated by standardizing the voltage of contact 5 with respect to UQ through an alternating resistance, for example, shown in Fig. 2. The preferred method of eliminating the bias voltage was shown on a balanced dual T-shaped sensor (Fig. 3), which will be described d Next. The output signal of the structure of Figure 3 () bx ..
    The magnitude of mobility xj described in the present invention closely matches the value of the bulk mobility of the layer 1 of the semiconductor carrier material. For a given voltage source (Ug), it is sufficient to exceed the value E of the critical transverse field, which will be described later, and the sensitivity of the sensor can be improved by choosing the ratio m. and
    It can also be shown that the signal-to-noise ratio for this type of magnetic sensor design (is approximately in degrees of 3/2;
    Equivalent expressions for equation (4):
    Uo WRh3B
    (five)
     (b)
    Uo hi5ifi
    t (7)
    T
    where W is the width of the sensor;
    Rh is equal to the magnitude of which is j and is the Hall constant, I is the source current;
    d is the drift velocity of charge carriers;
    B is the magnetic field in gauss; t is the thickness of layer 1.
    Equation (7) shows that the sensor output voltage or Hall voltage is inversely proportional to the thickness of the layer 1 of semiconductor material. Thus, the implementation of layer 1 thin should lead to a greater Hall voltage per unit of floor B.
    Some other expressions for the output voltage of the sensor in the contact point 5 are as follows:
     | about (8)
    Uo B wVPJl / D (9)
    Equation (6) shows that the Hall voltage or output voltage is proportional to the velocity of the charge carriers, and not the number of carriers. Equation (8) shows that the output voltage is expressed in terms of the applied current and the product of carrier mobility and characteristic resistance in ohms per unit area of semiconductor layer 1 in the active zone.
    According to (4), the output voltage can be expressed in terms of the applied voltage and carrier mobility (together with the magnetic flux density and relative elongation of the device). Neither Eq. (8) nor Eq. (4) reflect the limitations of the current or voltage that can be applied to a semiconductor device. According to these equations, the output, the voltage per unit, the applied field, is brain-regulated to any desired value by applying
    sufficient current or voltage while the heat generated in the semiconductor layer 1 can be removed. The limitations imposed by the dissipation of the power generated in the active region of layer 1 are in the equation (9) for now.
    Equation 9) is considered the most practical extension because it determines the output voltage or Hall voltage
    0 in terms of carrier mobility, characteristic resistance of the device in ohms per unit area, width W of layer 1, and density P of energy dissipated in conductive
    5 zone layer 1.
    The output voltage is proportional to the mobility of charge carriers (4). It is well known that when the transverse electric field E applied to semiconductor layer 1 increases, the mobility decreases.
    A larger output voltage of the Hall is obtained by increasing the mobility. Increasing the electric field by
    5 device reduces mobility and thus reduces the output signal of the Hall. When using silicon as a Hall sensor to increase sensitivity.
    0, the best output Hall voltages have been achieved, having mobility of about 150 cm / volt-sec for the main material used. It is well known that other substances, such as gallium arsenide, have much greater mobilities, and they exhibit Hall mobilities comparable to the usual drift mobility for silicon and germanium.
    0
    Both the Hall mobility and carrier mobility or drift mobility decreases with increasing electric field, i.e. there is no need to use a large electric field since
    5 this reduces mobility and leads to a decrease in the output signal of the Hall.
    As can be seen from the above findings, the essential criterion is the speed of the carrier, not mobility. However, simply achieving a high carrier velocity by applying a large electric field would have fatal consequences for energy dissipation. The resistivity of the material, the operation of the impurity level must also be taken into account.
    Preferred sensor construction options require certain minimum criteria to be met. First, the resistivity of a semiconductor material must be approximately 500 ohms per unit area in order to achieve an even higher specific value. Eoro achieve the selection of iL-KLui. Semiconductor wafer plates small -.-, pa, concentration level and rnzpch-p ways to control the concentration of the impurity, Second-second supply; An electric field should be between 500 and a centimeter until the required vehicle speeds are reached. Equation (b) shows that the output voltage signal is proportional to the drift velocity, FIG. B shows the effect of the electric field or carrier velocity for various semiconductor materials and as for holes ;. so for electrons. Obviously, when on the perennial field 3x10 V / cm speed. carriers reaches saturation and: 1g. the speed is 10 cm / sec, essentially independent of the material and type of carrier (holes or electrons). It is obvious from urzc nk (6) that the transverse field Zx.10 V / cm is desirable and that the Hall response signal is essentially independent of the material and type of carrier electrons or holes in order to reach it. Of this value of the transverse floor, special criteria should be observed regarding the minimum resistance of the conductive plate in ohms per unit area. From the above races. It is obvious to the judgment that it is irrelevant what composition of semiconductor material is involved in obtaining a large response signal to what type of carrier is used, assuming that a combination of exactly determined resistance in ohms per unit area and a transverse electric field is satisfied, BaiscHO know that as a criterion the voltage for the electric field of the excitation. the days and the resistivity in ohms per unit of the plate must be satisfied in order to create a working device that would not work on it Hinnom dissipating energy. Below these critical levels, operability can be achieved, but the improved device provided by the present invention will not be created. Referring to FIG. 4p, with which will be described a preferred embodiment of the invention, made using the technology of making field-effect transistors and controlling ion transfer to create impurity levels of penetration. The device must be made in a semiconductor material, such as silicon, germanium or gallium arsenide, with the level of impurities controlled so that the number of atoms per cubic centimeter is in the range below 10 g shown in FIG. 4. lo; -; .: i,; i ,, i-i ;; - a /:-:..:-, t is the specific co-i-ifepe SO Ohom and a. -ivi:; - by MB: -. -. to her -.; -:;,:: LESHCH.I1-1., ji, 4 show the type of reconciliation two: -with semiprose/iisx areas of L.7 which are wired with ionic viadiation. And. ": .-; th stitching i-oHHbm part and the ssdknitel is an electroscope; fiHM contact 8 .dl sensor. Ions of the implanted areas: E-H / TJI LYPHU-yyOZHZHYYYM-PIC --- (e.gachiBz ok -.-: .-, - / l le5: three askne 3 and 10. Co.;; acts of races along one: ; edge 6.7, that they have a section, -gam L say-X implemented T; indicated contacts of the sensor are poor form (5, E of which.-boiled sections protrude :: i of the semiconductor material to diffusion of contact into the main layer of the semi-GNJJHHKOBoro device did not enter. ---: wedges To attach eo.i.: -: su is useful to you, direct physical contact with the glycrozone, low-temperature compound, etc. Depth zone, on A small small protrusion 5, which serves as the point of attachment of the contact, is created using maxi during ION insertions so that the geometry of the insertion zone can be well comfyable along with the position of and -, - U- and interconnecting contacts 5- 6 The shaded area in the plan in FIG. 5 is an embedded region 6-7 in the GB layer of a semiconductor ma: serc-pa, for example silicon, in which donor ions (such as trivalent phosphorus) were introduced by high-energy bombardment of “Contact zones 8- 10 and contact items. subcontroller 11,12 that are attached to KOHTaKTaj 5 and 6 are formed obychnshl dkffuzng masked manner in which the larger r, ate portions of the donor media is introduced in a limited zone of the semiconductor substrate material. After t.:; O and the operation, layer 14 of silicon dioxide increases or osasis; gives on the entire surface of the semiconductor layer 9 with its embedded area of 6.7 in the layer 14 of silicon dioxide etched holes for attaching electrical conductive; and then aluminum contact strips are deposited on the silicon dioxide layer through etched holes to create contacts with sections 8-10 and also small contact areas 5 (6). This is better seen in figure 5 which is a cross section along the length of the device shown in figure 5. Areas b j.7 implants are implanted to depth X, which is controlled by
    energy of electron-volts of ions that bombard the surface of the cream material of layer 13 of the substrate. Layer 13 has an acceptor atom concentration of approximately about 5x10. The diffusion regions 8-10 and contact pads 11.12 have a concentration of donor impurities of 2x10 donors a cubic centimeter so that THEY are relatively highly conductive regions. Silicon dioxide layer 14 overlaps the implanted area 6.7 and contacts 8-12, shown in cross section, with holes etched in the appropriate places so that the aluminum contact strips 15-17 can protrude through the holes and make physical contact with various contact areas.
    The contact areas of contacts 5.6 should be as narrow as possible, since the sensitivity of the device decreases in proportion to the ratio of the contact width to the channel length L. The technical characteristics of the sensor made according to the described technology should be as follows for the device on a silicon substrate.
    The impurity concentration of the substrate of the semiconductor material layer is approximately Sxio acceptor per cubic centimeter.
    The ion-implantation material is three-stage fluorine as an electron donor.
    The implantation dose rate is 150 keV of implanted energy, adjustable to provide a donor atom density of approximately 2x10 donors per square centimeter.
    Depth of implementation is approximately 1800 Angstroms.
    The resistivity of the implant per unit area is approximately 10 lump.
    权利要求:
    Claims (1)
    [1]
    Invention Formula
    A magnetic flux sensor, having a f1nd layer of conductive semiconductor material, two separate field contacts attached to this layer, an output contact connected to the layer between two separate field contacts, and a voltage source, the terminals of which are connected to field contacts, differing in that, in order to increase its sensitivity, the ratio of the magnitude of the applied voltage to the distance between the contacts of the field is at least 500 volts per centimeter, and the electrical resistance between the two contacts of the field is equal to ayney least 500 - ohms where L - length, W - the width of the conductive layer between the con-tact floor .i r
    (".four
     S Xd i 7 S f §
    t "s - i- -
    P o
    I -J-Mv- X
     in
    n
    l
    one
    /
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    同族专利:
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    ES447767A1|1977-06-16|
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    引用文献:
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    US3114009A|1957-03-07|1963-12-10|Armour Res Found|Hall element magnetic transducer|JPS5368840U|1976-11-09|1978-06-09|
    US4141026A|1977-02-02|1979-02-20|Texas Instruments Incorporated|Hall effect generator|
    US4129880A|1977-07-01|1978-12-12|International Business Machines Incorporated|Channel depletion boundary modulation magnetic field sensor|
    US4163986A|1978-05-03|1979-08-07|International Business Machines Corporation|Twin channel Lorentz coupled depletion width modulation effect magnetic field sensor|
    JPH0467793B2|1986-07-18|1992-10-29|Sanyo Electric Co|
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    US4939563A|1989-08-18|1990-07-03|Ibm Corporation|Double carrier deflection high sensitivity magnetic sensor|
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    优先权:
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